Inter-metal dielectric films may be classified into inorganic films and organic films according to their material. However, when the DRAM is miniaturized to be the 1M bit or 2M bit level, an inter-metal dielectric film having a low dielectric constant is required because of the limitations in the process. In a DRAM of a 4M bit level, a silicon oxide film is normally employed as the inter-metal dielectric film. The present invention relates to a water-based composition for forming inter-metal dielectric films, and more particularly to a water-based composition for forming inter-metal dielectric films which can prevent the peeling of inter-metal dielectric films due to the influence of moisture.Īs semiconductor devices become highly integrated and have higher performance, a high-quality inter-metal dielectric film having an excellent electrical insulation property is increasingly required for semiconductor devices. rarĪOMEI Partition Assistant Pro 5.5 portable multilang. AOMEI Partition Assistant Pro 5.5 Portable Multilang.
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